MRFE6S9160HSR3

Frequency :
Gain :
Output Power :
Continuous Drain Current :
Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Drain-Source Breakdown Voltage : 66 V
Gate-Source Breakdown Voltage : - 0.5 V, 12 V
Package / Case : NI-780S


Pinout




Description

The MRFE6S9160HSR3 is designed as one kind of N-channel enhancement-mode lateral MOSFET that can be used in GSM EDGE and GSM applications. The high gain and broadband performance of this device makes it ideal for large- signal, common-source amplifier applications in 28 volt base station equipment.

Features of the MRFE6S9160HSR3 are:(1)characterized with series equivalent large-signal impedance parameters; (2)integrated ESD protection; (3)225 capable plastic package; (4)RoHS compliant; (5)in tape and reel. R1 suffix = 500 units per 24 mm, 13 inch reel. The absolute maximum ratings of the MRFE6S9160HSR3 can be summarized as:(1)Drain-Source Voltage: -0.5 to +66 Vdc;(2)Gate-Source Voltage: -0.5 to +12 Vdc;(3)Maximum Operation Voltage: 32 to +0 Vdc;(4)Storage Temperature Range: -65 to +150 °C;(5)Case Operating Temperature: 150 °C;(6)Operating Junction Temperature: 225 °C.

The electrical characteristics of this device can be summarized as:(1)Zero Gate Voltage Drain Leakage Current (VDS = 66 Vdc, VGS = 0 Vdc): 10 Adc;(2)Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc): 1 Adc;(3)Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc): 10 Adc;(4)Gate Threshold Voltage: 1 to 3 V;(5)Gate Quiescent Voltage: 2.3 to 3.8 V;(6)Drain-Source On-Voltage: 0.05 to 0.3 V. If you want to know more information about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .