Transistors RF MOSFET Power HV6E 900MHZ 200W NI860ML
MRFE6P9220HR3: Transistors RF MOSFET Power HV6E 900MHZ 200W NI860ML
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Transistors RF MOSFET Power HV6 900MHZ 300W NI860ML
Configuration : | Dual Common Source | Transistor Polarity : | N-Channel |
Drain-Source Breakdown Voltage : | 66 V | Gate-Source Breakdown Voltage : | - 0.5 V, 12 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | NI-860C3 |
Packaging : | Reel |