Transistors RF MOSFET Power HV6 900MHZ 300W NI860ML
MRFE6P3300HR3: Transistors RF MOSFET Power HV6 900MHZ 300W NI860ML
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Transistors RF MOSFET Power HV6E 900MHZ 200W NI860ML
Configuration : | Single Dual Drain Dual Gate | Transistor Polarity : | N-Channel |
Drain-Source Breakdown Voltage : | 66 V | Gate-Source Breakdown Voltage : | - 0.5 V, 12 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | NI-860C3 |
Packaging : | Reel |
Technical/Catalog Information | MRFE6P3300HR3 |
Vendor | Freescale Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | N-Channel |
Voltage - Rated | 32V |
Current Rating | 1.6A |
Package / Case | NI-860C3 |
Packaging | Tape & Reel (TR) |
Drawing Number | 375; 375G-04 ; HR; 5 |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | MRFE6P3300HR3 MRFE6P3300HR3 |