MRFE6S9130HR3

Frequency :
Gain :
Output Power :
Continuous Drain Current :
Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Drain-Source Breakdown Voltage : 66 V
Gate-Source Breakdown Voltage : - 0.5 V, 12 V
Package / Case : NI-780


Description

The MRFE6S9130HR3 is RF Power Field Effect Transistor. It is designed for N-CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for  multicarrier amplifier applications.

The features of MRFE6S9130HR3 can be summarized as:(1)Characterized with Series Equivalent Large-Signal Impedance Parameters; (2)Internally Matched for Ease of Use; (3)Qualified Up to a Maximum of 32 VDD Operation; (4)Integrated ESD Protection; (5)RoHS Compliant; (6)In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

The absolute maximum ratings of MRFE6S9130HR3 are:(1)Drain-Source Voltage VDSS :-0.5V to +66V; (2)Gate-Source Voltage VGS:-0.5V to +12V; (3)Storage Temperature Range Tstg:- 65°C to +150 °C; (4)Case Operating Temperature TC:150 °C; (5)Operating Junction Temperature TJ:225 °C.

If you want to know more information such as the electrical characteristics about the MRFE6S9130HR3, please download the datasheet in www.seekic.com or www.chinaicmart.com .