Transistors RF MOSFET Power HV6E 125W
MRFE6S9125NBR1: Transistors RF MOSFET Power HV6E 125W
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US $84.61 - 84.61 / Piece
Transistors RF MOSFET Power HV6 900MHZ 300W NI860ML
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Transistors RF MOSFET Power HV6E 900MHZ 200W NI860ML
Configuration : | Single | Transistor Polarity : | N-Channel | ||
Frequency : | 880 MHz | Gain : | 19 dB, 20 dB, 20.2 dB | ||
Output Power : | 27 W | Drain-Source Breakdown Voltage : | - 0.5 V, 66 V | ||
Gate-Source Breakdown Voltage : | - 0.5 V, 12 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | TO-272 WB EP | Packaging : | Reel |
Technical/Catalog Information | MRFE6S9125NBR1 |
Vendor | Freescale Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | N-Channel |
Voltage - Rated | 28V |
Current Rating | 950mA |
Package / Case | TO-272-4 |
Packaging | Tape & Reel (TR) |
Drawing Number | 375; 1484-04; NBR; 4 |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | MRFE6S9125NBR1 MRFE6S9125NBR1 |