Transistors RF MOSFET Power HV6E 60W TO270-2N FET
MRFE6S9060NR1: Transistors RF MOSFET Power HV6E 60W TO270-2N FET
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Transistors RF MOSFET Power HV6 900MHZ 300W NI860ML
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Transistors RF MOSFET Power HV6E 900MHZ 200W NI860ML
Configuration : | Single | Transistor Polarity : | N-Channel |
Drain-Source Breakdown Voltage : | 66 V | Gate-Source Breakdown Voltage : | - 0.5 V, 12 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | TO-270 |
Packaging : | Reel |
Rating | Symbo | Value | Unit |
Drain-Source Voltage | VDSS | - 0.5, +66 | Vdc |
Gate-Source Voltage | VGS | - 0.5, +12 | Vdc |
Maximum Operation Voltage | VDD |
32, +0 | Vdc |
Storage Temperature Range | Tstg | - 65 to +150 | °C |
Case Operating Temperature | TC | 150 | °C |
Operating Junction Temperature (1,2) | TJ | 225 | °C |
Technical/Catalog Information | MRFE6S9060NR1 |
Vendor | Freescale Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | N-Channel |
Voltage - Rated | 28V |
Current Rating | 450mA |
Package / Case | TO-270-2 |
Packaging | Tape & Reel (TR) |
Drawing Number | 375; 1265-09; NR; 3 |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | MRFE6S9060NR1 MRFE6S9060NR1 MRFE6S9060NR1TR ND MRFE6S9060NR1TRND MRFE6S9060NR1TR |