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MRF959T1

Features: • Low Noise Figure, NFmin = 1.3 dB (Typ) @ 1 GHz @ 5 mA• High Current GainBandwidth Product, ft = 9 GHz @ 30 mA• Maximum Available Gain, MAG = 17 dB (Typ) @ 1 GHz @ 15 mA• Output Third Order Intercept, OIP3 = +30 dBm @ 1 GHz @ 30 mA• Fully IonImplanted with ...

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SeekIC No. : 004427105 Detail

MRF959T1: Features: • Low Noise Figure, NFmin = 1.3 dB (Typ) @ 1 GHz @ 5 mA• High Current GainBandwidth Product, ft = 9 GHz @ 30 mA• Maximum Available Gain, MAG = 17 dB (Typ) @ 1 GHz @ 15 mA...

MRF959T1 Data Sheet

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Part Number:
MRF959T1
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low Noise Figure, NFmin = 1.3 dB (Typ) @ 1 GHz @ 5 mA
• High Current GainBandwidth Product, ft = 9 GHz @ 30 mA
• Maximum Available Gain, MAG = 17 dB (Typ) @ 1 GHz @ 15 mA
• Output Third Order Intercept, OIP3 = +30 dBm @ 1 GHz @ 30 mA
• Fully IonImplanted with Gold Metallization and Nitride Passivation
• Available in Tape and Reel Packaging Options: T1 Suffix = 3,000 Units per Reel


Specifications

Rating Symbol Value Unit
CollectorEmitter Voltage VCEO 10 Vdc
CollectorBase Voltage VCBO 20 Vdc
EmitterBase Voltage VEBO 1.5 Vdc
Power Dissipation (1) TC = 75°C
Derate linearly above TC = 75°C @		 PDmax 0.150
2		 Watts
mW/
Collector Current - Continuous (2) IC 100 mA
Maximum Junction Temperature TJmax 150
Storage Temperature Tstg 55 to +150
Thermal Resistance, Junction to Case RJC 500 W/



Description

Motorola's MRF959 is a high performance silicon NPN transistor designed for use in high gain, low noise smallsignal amplifiers. The MRF959 is well suited for low voltage applications. This device features a 9 GHz DC current gainbandwidth product with excellent linearity.



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