MRF949T1

Features: • Low Noise Figure, NFmin = 1.4 dB (Typ) @ 1 GHz @ 5 mA• High Current GainBandwidth Product, ft = 9 GHz @ 15 mA• Maximum Stable Gain = 18 dB @ 1 GHz @ 5 mA• Output Third Order Intercept, OIP3 = +29 dBm @ 1 GHz @ 10 mA• Fully IonImplanted with Gold Metallizat...

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SeekIC No. : 004427101 Detail

MRF949T1: Features: • Low Noise Figure, NFmin = 1.4 dB (Typ) @ 1 GHz @ 5 mA• High Current GainBandwidth Product, ft = 9 GHz @ 15 mA• Maximum Stable Gain = 18 dB @ 1 GHz @ 5 mA• Output ...

floor Price/Ceiling Price

Part Number:
MRF949T1
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

• Low Noise Figure, NFmin = 1.4 dB (Typ) @ 1 GHz @ 5 mA
• High Current GainBandwidth Product, ft = 9 GHz @ 15 mA
• Maximum Stable Gain = 18 dB @ 1 GHz @ 5 mA
• Output Third Order Intercept, OIP3 = +29 dBm @ 1 GHz @ 10 mA
• Fully IonImplanted with Gold Metallization and Nitride Passivation
• Available in Tape and Reel Packaging Options: T1 Suffix = 3,000 Units per Reel



Specifications

Rating Symbol Value Unit
CollectorEmitter Voltage VCEO 10 Vdc
CollectorBase Voltage VCBO 20 Vdc
EmitterBase Voltage VEBO 1.5 Vdc
Power Dissipation (1) TC = 75°C
Derate linearly above TC = 75°C @
PDmax 0.144
1.92
Watts
mW/
Collector Current - Continuous (2) IC 50 mA
Maximum Junction Temperature TJmax 150
Storage Temperature Tstg 55 to +150
Thermal Resistance, Junction to Case Tstg 520 /W



Description

Motorola's MRF949 is a high performance NPN transistor designed for use in high gain, low noise smallsignal amplifiers. The MRF949 is well suited for low voltage wireless applications. This device features a 9 GHz DC current gainbandwidth product with excellent linearity.



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