MRF949

The MRF949 is a high performance NPN transistor designed for use in high gain, low noise smallsignal amplifiers. It is well suited for low voltage wireless applications. This device features a 9.0 GHz DC current gainbandwidth product with excellent linearity.

The features of MRF949 can be summarized as:(1)Low Noise Figure, NFmin = 1.4 dB (Typ) @ 1.0 GHz, 8.0 V, 3.0 mA; (2)High Current GainBandwidth Product, f = 9.0 GHz, 6.0 V,15 mA; (3)Maximum Stable Gain, 19 dB @ 1.0 GHz, 6.0 V, 10 mA; (4)Output Third Order Intercept, Output IP3 = 29 dBm @ 1.0 GHz,6.0V, 10 mA; (5)Fully IonImplanted with Gold Metallization and Nitride Passivation.

The absolute maximum ratings of MRF949 are:(1)CollectorEmitter Voltage: 10 Vdc; (2)CollectorBase Voltage:20 Vdc; (3)EmitterBase Voltage:1.5 Vdc; (4)Power Dissipation:@ TC = 75°C..0.144 W,Derate linearly above TC= 75°C at..1.92 mW/°C; (5)Collector Current Continuous [Note 3]:50 mA; (6)Storage Temperature:55°C to 150 °C; (7)Maximum Junction Temperature: 150 °C.NOTES: 1.Meets Human Body Model (HBM) 300 V and Machine Model (MM) 75 V. 2. ESD data available upon request. 3. For MTBF >10 years.

If you want to know more information such as the electrical characteristics about the MRF949, please download the datasheet in www.seekic.com or www.chinaicmart.com .