MRF9382T1

The MRF9382T1 is silicon lateral FET, N-channel enhancement-mode MOSFET. It is designed for use in low voltage, moderate power amplifiers such as portable analog and digital cellular radios and PC RF modems.

The features of MRF9382T1 can be summarized as:(1)Performance Specifications at 900 MHz:Output Power = 36.5 dBm Typ,Power Gain = 10.5 dB Typ,Efficiency = 65% Typ; (2)Guaranteed Ruggedness at Load VSWR = 10:1; (3)New Plastic Surface Mount Package.

The absolute maximum ratings of MRF9382T1 are:(1)DrainSource Voltage:28 V; (2)DrainGate Voltage (RGS = 1.0 M):28 V; (3)GateSource Voltage:±12V; (4)Drain Current Continuous:2.2 A; (5)Total Device Dissipation:@ TC = 50°C..12.5 W,Derate above 50°C..125 mW/°C; (6)Storage Temperature Range:65°C to 150 °C; (7)Operating Junction Temperature:150 °C.NOTE: ESD data available upon request.

If you want to know more information such as the electrical characteristics about the MRF9382T1, please download the datasheet in www.seekic.com or www.chinaicmart.com .