MRF9210R5

Continuous Drain Current :
Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Drain-Source Breakdown Voltage : 65 V
Gain : 16.5 dB
Output Power : 40 W
Gate-Source Breakdown Voltage : - 0.5 V, + 15 V
Frequency : 865 MHz to 895 MHz
Package / Case : NI-860C3-5


Description

The MRF9210R5 is one kind of 880 MHz, 200 W, 26 V lateral N-channel broadband RF power MOSFET that designed for broadband commercial and industrial applications with frequencies from 865 MHz to 895 MHz. It is ideal for large- signal, common-source amplifier applications in 26 volt base station equipment because of the high gain and broadband performance and 2-stage design with off-chip matching for the input, interstage and output networks to cover the desired frequency band.

Features of the MRF9210R5 are:(1)characterized with series equivalent large-signal impedance parameters;(2)integrated quiescent current temperature compensation with enable/disable function;(3)capable of handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 40 watts avg. N-CDMA;(4)integrated ESD protection;(5)200°C capable plastic package;(6)excellent thermal stability;(7)in tape and reel. R3 suffix = 250 units per 56 mm, 13 inch reel.

The absolute maximum ratings of the MRF9210R5 can be summarized as:(1)drain-source voltage:+65 Vdc;(2)gate-source voltage:-0.5 to +15 Vdc;(3)storage temperature range:-65 to +150 °C;(4)operating junction temperature:200 °C;(5)total device dissipation @ Tc=25°C:565 watts;(6)total derate above 25°C:3.2 W/°C.If you want to know more information such as the electrical characteristics about the MRF9210R5, please download the datasheet in www.seekic.com or www.chinaicmart.com .