Transistors RF MOSFET Power 200W RF LDMOS NI860ML
MRF9210R3: Transistors RF MOSFET Power 200W RF LDMOS NI860ML
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Configuration : | Single | Transistor Polarity : | N-Channel | ||
Frequency : | 865 MHz to 895 MHz | Gain : | 16.5 dB | ||
Output Power : | 40 W | Drain-Source Breakdown Voltage : | 65 V | ||
Gate-Source Breakdown Voltage : | - 0.5 V, + 15 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | NI-860C3-5 | Packaging : | Reel |
Rating | Symbol | Value | Unit |
DrainSource Voltage | VDSS |
65 | Vdc |
GateSource Voltage | VGS | - 0.5,+15 | Vdc |
Total Device Dissipation @ TC = 25 Derate above 25 |
PD | 565 3.2 |
Watts W/ |
Storage Temperature Range | Tstg | 65 to +150 | |
Operating Junction Temperature | TJ | 200 |