MRF9135LR3

Continuous Drain Current :
Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Drain-Source Breakdown Voltage : 65 V
Output Power : 25 W
Gate-Source Breakdown Voltage : - 0.5 V, + 15 V
Package / Case : NI-780-3
Gain : 17.8 dB
Frequency : 865 MHz to 895 MHz


Features:

• Typical NCDMA Performance @ 880 MHz, 26 Volts, IDQ = 1100 mA
        IS95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
        Output Power - 25 Watts Avg.
        Power Gain - 17.8 dB
        Efficiency - 25%
        Adjacent Channel Power -
        750 kHz: 47 dBc @ 30 kHz BW
• Internally Matched, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 135 Watts CW Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent LargeSignal Impedance Parameters
• Available in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ Nominal.


Specifications

Rating	Symbol	Value	Unit
DrainSource Voltage	VDSS	65	Vdc
GateSource Voltage	VGS	+15,- 0.5	Vdc
Total Device Dissipation @ TC > 25 Derate above 25	PD	298 1.7	Watts W/
Storage Temperature Range	Tstg	65 to +200
Operating Junction Temperature	TJ	200

Description

MRF9135LR3 is Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for largesignal, commonsource amplifier applications in 26 volt base station equipment.