MRF9130LR3

Features:

• Typical Performance for GSM Frequencies, 921 to 960 MHz, 28 Volts
        Output Power @ P1dB  - 135 Watts 
        Power Gain - 16.5 dB @ 130 Watts Output Power 
        Efficiency - 48% @ 130 Watts Output Power
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 28 Vdc, All Frequency Band, 130 Watts CW Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Low Gold Plating Thickness on Leads, 40µ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Specifications

Rating	Symbol	Value	Unit
DrainSource Voltage	VDSS	65	Vdc
GateSource Voltage	VGS	- 0.5, +15	Vdc
Total Device Dissipation @ TC = 25 Derate above 25	PD	298 1.7	Watts W/
Storage Temperature Range	Tstg	65 to +200
Operating Junction Temperature	TJ	200

Description

MRF9130LR3 is Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these devices make them ideal for large- signal, common-source amplifier applications in 28 volt base station equipment.