DescriptionThe MRF9130 is one kind of 880 MHz, 135 W, 26 V lateral N-channel broadband RF power MOSFET that designed for broadband commercial and industrial applications with frequencies from 865 MHz to 895 MHz. It is ideal for large- signal, common-source amplifier applications in 26 volt base st...
MRF9130: DescriptionThe MRF9130 is one kind of 880 MHz, 135 W, 26 V lateral N-channel broadband RF power MOSFET that designed for broadband commercial and industrial applications with frequencies from 865 MH...
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The MRF9130 is one kind of 880 MHz, 135 W, 26 V lateral N-channel broadband RF power MOSFET that designed for broadband commercial and industrial applications with frequencies from 865 MHz to 895 MHz. It is ideal for large- signal, common-source amplifier applications in 26 volt base station equipment because of the high gain and broadband performance and 2-stage design with off-chip matching for the input, interstage and output networks to cover the desired frequency band.
Features of the MRF9130 are:(1)characterized with series equivalent large-signal impedance parameters;(2)integrated quiescent current temperature compensation with enable/disable function;(3)capable of handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 135 watts avg. N-CDMA;(4)integrated ESD protection;(5)200°C capable plastic package;(6)excellent thermal stability;(7)in tape and reel. R3 suffix = 250 units per 56 mm, 13 inch reel.
The absolute maximum ratings of the MRF9130 can be summarized as:(1)drain-source voltage:+65 Vdc;(2)gate-source voltage:-0.5 to +15 Vdc;(3)storage temperature range:-65 to +200 °C;(4)operating junction temperature:200 °C;(5)total device dissipation @ Tc=25°C:298 watts;(6)total derate above 25°C:1.7 W/°C.If you want to know more information such as the electrical characteristics about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .