Transistors RF MOSFET Power 60W 1GHZ RFPWR FET NI360
MRF9060LR1: Transistors RF MOSFET Power 60W 1GHZ RFPWR FET NI360
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Configuration : | Single | Transistor Polarity : | N-Channel | ||
Frequency : | 1 GHz | Gain : | 17 dB | ||
Output Power : | 60 W | Drain-Source Breakdown Voltage : | 65 V | ||
Gate-Source Breakdown Voltage : | - 0.5 V, + 15 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | NI-360-3 | Packaging : | Reel |