MMSF7N03Z

` Zener Protected Gates Provide Electrostatic Discharge Protection
` Ultra Low R_DS(on) Provides Higher Efficiency and Extends Battery Life
` Designed to withstand 200V Machine Model and 2000V Human Body Model
` Logic Level Gate Drive - Can Be Driven by Logic ICs
` Miniature SO8 Surface Mount Package - Saves Board Space
` Diode Is Characterized for Use In Bridge Circuits
` Diode Exhibits High Speed, With Soft Recovery
` IDSS Specified at Elevated Temperature
` Mounting Information for SO8 Package Provided

(1) When mounted on 1 inch square FR4 or G10 board (V_GS  = 10 V, @ 10 Seconds)
(2) When mounted on 1 inch square FR4 or G10 board (V_GS  = 10 V, @ Steady State)
(3) Repetitive rating; pulse width limited by maximum junction temperature.

MMSF7N03Z EZFETs^TM  are an advanced series of power MOSFETs which utilize Motorola's High Cell Density TMOS process and contain monolithic backtoback zener diodes. These zener diodes provide protection against ESD and unexpected transients. These miniature surface mount MOSFETs feature ultra low R_DS(on) amd true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the draintosource diode has a very low reverse recovery time. MMSF7N03Z EZFET devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dcdc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives.