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MMSF10N02Z

Features: ` Zener Protected Gates Provide Electrostatic Discharge Protection` Low RDS(on) Provides Higher Efficiency and Extends Battery Life` Logic Level Gate Drive - Can Be Driven by Logic ICs` Miniature SO8 Surface Mount Package - Saves Board Space` Diode Exhibits High Speed, With Soft Recovery...

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SeekIC No. : 004424287 Detail

MMSF10N02Z: Features: ` Zener Protected Gates Provide Electrostatic Discharge Protection` Low RDS(on) Provides Higher Efficiency and Extends Battery Life` Logic Level Gate Drive - Can Be Driven by Logic ICs` Mi...

MMSF10N02Z Data Sheet

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Part Number:
MMSF10N02Z
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/9/26

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Product Details

Description



Features:

` Zener Protected Gates Provide Electrostatic Discharge Protection
` Low RDS(on) Provides Higher Efficiency and Extends Battery Life
` Logic Level Gate Drive - Can Be Driven by Logic ICs
` Miniature SO8 Surface Mount Package - Saves Board Space
` Diode Exhibits High Speed, With Soft Recovery
` IDSS Specified at Elevated Temperature
` Mounting Information for SO8 Package Provided


Pinout

Connection Diagram


Specifications

Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
20
Vdc
DraintoGate Voltage (RGS = 1.0 M )
VDGR
20
Vdc
GatetoSource Voltage - Continuous
VGS
±12
Vdc
Drain Current - Continuous @ TA = 25
Drain Current - Continuous @ TA = 100
Drain Current - Single Pulse (tp 10 s)
ID
ID
IDM
10
7.0
80
Adc
Apk
Total Power Dissipation @ TA = 25 (2)
PD
2.5
Watts
Operating and Storage Temperature Range
55 to 150
55 to 150
Thermal Resistance - Junction to Ambient (2)
RJA
50
/W
Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds
TL
260



Description

MMSF10N02Z EZFETsTM are an advanced series of power MOSFETs which utilize Motorola's High Cell Density HDTMOS process and contain monolithic backtoback zener diodes. These zener diodes provide protection against ESD and unexpected transients. These miniature surface mount MOSFETs feature low RDS(on) and true  logic level erformance. They are capable of withstanding high energy in the avalanche and commutation modes and the draintosource diode has a very low reverse recovery time.

MMSF10N02Z EZFET devices are designed for use in low voltage, high speed switching applications where power efficiency is important.




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