MMSF1310

PinoutSpecifications Parameter Symbol Max Unit DraintoSource Voltage VDSS 30 Vdc DraintoGate Voltage (RGS = 1.0 M) VGSR 30 Vdc GatetoSource Voltage - Continuous VGS ± 20 Vdc Continuous Drain Current @ TA = 25°C (1)Pulsed Drain Current (2) I...

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SeekIC No. : 004424290 Detail

MMSF1310: PinoutSpecifications Parameter Symbol Max Unit DraintoSource Voltage VDSS 30 Vdc DraintoGate Voltage (RGS = 1.0 M) VGSR 30 Vdc GatetoSource Voltage - Conti...

floor Price/Ceiling Price

Part Number:
MMSF1310
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/9/26

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Product Details

Description



Pinout

  Connection Diagram


Specifications

Parameter
Symbol
Max
Unit
DraintoSource Voltage
VDSS
30
Vdc
DraintoGate Voltage (RGS = 1.0 M)
VGSR
30
Vdc
GatetoSource Voltage - Continuous
VGS
± 20
Vdc
Continuous Drain Current @ TA = 25°C (1)
Pulsed Drain Current (2)
ID
IDM
10
50
Adc
Total Power Dissipation @ TA = 25°C (1)
PD
2.5
W
Operating and Storage Temperature Range
TJ,Tstg
55 to 150
°C
1) When mounted on 1 inch square FR4 or G10 board (VGS = 10 V, @ 10 Seconds)
(2) Repetitive rating; pulse width limited by maximum junction temperature.



Description

MMSF1310 MiniMOSE devices are an advanced series of power MOSFETs which utilize Motorola's High Cell Density HDTMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the draintosource diode has a very low reverse recovery time. MMSF1310 MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dcdc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be
used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

• Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• High Speed Switching Provides High Efficiency for DC/DC Converter
• Miniature SO8 Surface Mount Package - Saves Board Space
• Diode Exhibits High Speed, With Soft Recovery




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