Features: ` Zener Protected Gates Provide Electrostatic Discharge Protection` Designed to Withstand 200 V Machine Model and 2000 V Human Body Model` Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life` Logic Level Gate Drive - Can Be Driven by Logic ICs` Miniature SO8 Surface Mou...
MMSF10N03Z: Features: ` Zener Protected Gates Provide Electrostatic Discharge Protection` Designed to Withstand 200 V Machine Model and 2000 V Human Body Model` Ultra Low RDS(on) Provides Higher Efficiency and ...
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Features: ` Zener Protected Gates Provide Electrostatic Discharge Protection` Low RDS(on) Provides...
` Zener Protected Gates Provide Electrostatic Discharge Protection
` Designed to Withstand 200 V Machine Model and 2000 V Human Body Model
` Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
` Logic Level Gate Drive - Can Be Driven by Logic ICs
` Miniature SO8 Surface Mount Package - Saves Board Space
` Diode Is Characterized for Use In Bridge Circuits
` Diode Exhibits High Speed, With Soft Recovery
` IDSS Specified at Elevated Temperature
` Mounting Information for SO8 Package Provided
Parameter |
Symbol |
Max |
Unit |
DraintoSource Voltage |
VDSS |
30 |
Vdc |
DraintoGate Voltage (RGS = 1.0 M ) |
VDGR |
30 |
Vdc |
GatetoSource Voltage - Continuous |
VGS |
±20 |
Vdc |
Drain Current - Continuous @ TA = 25 (1) Drain Current - Continuous @ TA = 70 (1) Drain Current - Pulsed Drain Current (3) |
ID ID IDM |
10 7.7 50 |
Adc |
Total Power Dissipation @ TA = 25 (1) Linear Derating Factor @ TA = 25 (1) |
PD |
2.5 20 |
Watts mW/ |
Total Power Dissipation @ TA = 25 (2) Linear Derating Factor @ TA = 25 (2) |
PD |
1.6 12 |
Watts mW/ |
Operating and Storage Temperature Range |
TJ , Tstg |
55 to 150 |
|
Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25 (VDD = 30 Vdc, VGS = 10 Vdc, IL = 10 Apk, L = 20 mH, RG = 25) |
EAS |
1000 |
mJ |
MMSF10N03Z EZFETsTM are an advanced series of power MOSFETs which utilize Motorola's High Cell Density TMOS process and contain monolithic backtoback zener diodes. These zener diodes provide protection against ESD and unexpected transients. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commuta-tion modes and the draintosource diode has a very low reverse recovery time. MMSF10N03Z EZFET devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dcdc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives.