MMSF10N03Z

Features: ` Zener Protected Gates Provide Electrostatic Discharge Protection` Designed to Withstand 200 V Machine Model and 2000 V Human Body Model` Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life` Logic Level Gate Drive - Can Be Driven by Logic ICs` Miniature SO8 Surface Mou...

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SeekIC No. : 004424288 Detail

MMSF10N03Z: Features: ` Zener Protected Gates Provide Electrostatic Discharge Protection` Designed to Withstand 200 V Machine Model and 2000 V Human Body Model` Ultra Low RDS(on) Provides Higher Efficiency and ...

floor Price/Ceiling Price

Part Number:
MMSF10N03Z
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

` Zener Protected Gates Provide Electrostatic Discharge Protection
` Designed to Withstand 200 V Machine Model and 2000 V Human Body Model
` Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
` Logic Level Gate Drive - Can Be Driven by Logic ICs
` Miniature SO8 Surface Mount Package - Saves Board Space
` Diode Is Characterized for Use In Bridge Circuits
` Diode Exhibits High Speed, With Soft Recovery
` IDSS Specified at Elevated Temperature
` Mounting Information for SO8 Package Provided




Pinout

  Connection Diagram


Specifications

Parameter
Symbol
Max
Unit
DraintoSource Voltage
VDSS
30
Vdc
DraintoGate Voltage (RGS = 1.0 M )
VDGR
30
Vdc
GatetoSource Voltage - Continuous
VGS
±20
Vdc
Drain Current - Continuous @ TA = 25 (1)
Drain Current - Continuous @ TA = 70 (1)
Drain Current - Pulsed Drain Current (3)
ID
ID
IDM
10
7.7
50
Adc
Total Power Dissipation @ TA = 25 (1)
Linear Derating Factor @ TA = 25 (1)
PD
2.5
20
Watts
mW/
Total Power Dissipation @ TA = 25 (2)
Linear Derating Factor @ TA = 25 (2)
PD
1.6
12
Watts
mW/
Operating and Storage Temperature Range
TJ , Tstg
55 to 150
Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25
(VDD = 30 Vdc, VGS = 10 Vdc, IL = 10 Apk, L = 20 mH, RG = 25)
EAS
1000
mJ



Description

MMSF10N03Z EZFETsTM are an advanced series of power MOSFETs which utilize Motorola's High Cell Density TMOS process and contain monolithic backtoback zener diodes. These zener diodes provide protection against ESD and unexpected transients. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commuta-tion modes and the draintosource diode has a very low reverse recovery time. MMSF10N03Z EZFET devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dcdc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives.




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