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MMSF3205

Features: ` Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life` Logic Level Gate Drive - Can Be Driven by Logic ICs` Miniature SO8 Surface Mount Package - Saves Board Space` Diode Is Characterized for Use In Bridge Circuits` Diode Exhibits High Speed, With Soft Recovery` IDSS Sp...

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MMSF3205: Features: ` Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life` Logic Level Gate Drive - Can Be Driven by Logic ICs` Miniature SO8 Surface Mount Package - Saves Board Space` Diode...

MMSF3205 Data Sheet

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Part Number:
MMSF3205
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/9/26

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Product Details

Description



Features:

` Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
` Logic Level Gate Drive - Can Be Driven by Logic ICs
` Miniature SO8 Surface Mount Package - Saves Board Space
` Diode Is Characterized for Use In Bridge Circuits
` Diode Exhibits High Speed, With Soft Recovery
` IDSS Specified at Elevated Temperature
` Avalanche Energy Specified
` Mounting Information for SO8 Package Provided




Pinout

Connection Diagram


Specifications

Rating
Symbol
Max
Unit
DraintoSource Voltage
VDSS
20
V
DraintoGate Voltage (RGS = 1.0 M)
VDGR
20
V
GatetoSource Voltage - Continuous
VGS
±12
V
1 inch SQ.
FR4 or G10 PCB
10 seconds		 Thermal Resistance - Junction to Ambient
Total Power Dissipation @ TA = 25
Linear Derating Factor
Drain Current - Continuous @ TA = 25
Continuous @ TA = 70° C
Pulsed Drain Current (1)
RTHJA
PD
ID
ID
IDM
50
2.5
20
11
8.0
55
/W
Watts
mW/
A
A
A
Minimum
FR4 or G10 PCB
10 seconds		 Thermal Resistance - Junction to Ambient
Total Power Dissipation @ TA = 25
Linear Derating Factor
Drain Current - Continuous @ TA = 25
Continuous @ TA = 70
Pulsed Drain Current (1)
RTHJA
PD
ID
ID
IDM
80
1.56
12.5
8.6
6.4
43
/W
Watts
mW/
A
A
A
Operating and Storage Temperature Range
TJ , Tstg
55 to 150

Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25
(VDD = 20 Vdc, VGS = 4.5 Vdc, Peak IL = 11 Apk, L = TBD mH, RG = 25 )
EAS
TBD
mJ



Description

MMSF3205 MiniMOSTM devices are an advanced series of power MOSFETs which utilize Motorola's High Cell Density HDTMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on)  and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the draintosource diode has a very low reverse recovery time. MMSF3205 MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dcdc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. MMSF3205 can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.




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