MMSF2P02E

Features: ` Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life` Logic Level Gate Drive - Can Be Driven by Logic ICs` Miniature SO8 Surface Mount Package - Saves Board Space` Diode Is Characterized for Use In Bridge Circuits` Diode Exhibits High Speed` Avalanche Energy Specified`...

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SeekIC No. : 004424291 Detail

MMSF2P02E: Features: ` Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life` Logic Level Gate Drive - Can Be Driven by Logic ICs` Miniature SO8 Surface Mount Package - Saves Board Space` Diode...

floor Price/Ceiling Price

Part Number:
MMSF2P02E
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

` Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
` Logic Level Gate Drive - Can Be Driven by Logic ICs
` Miniature SO8 Surface Mount Package - Saves Board Space
` Diode Is Characterized for Use In Bridge Circuits
` Diode Exhibits High Speed
` Avalanche Energy Specified
` Mounting Information for SO8 Package Provided
` IDSS Specified at Elevated Temperature




Pinout

  Connection Diagram


Specifications

Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
20
Vdc
GatetoSource Voltage - Continuous
VGS
±20
Vdc
Drain Current - Continuous @ TA = 25
Drain Current - Continuous @ TA = 100
Drain Current - Single Pulse (tp 10 s)
ID
ID
IDM
2.5
1.7
13
Adc
Apk
Total Power Dissipation @ TA = 25 (2)
PD
2.5
Watts
Operating and Storage Temperature Range
55 to 150
55 to 150
Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25
(VDD = 20 Vdc, VGS = 5.0 Vdc, IL = 9.0 Apk, L = 14mH, RG = 25 )
EAS
216
mJ
Thermal Resistance - Junction to Ambient (2)
RJA
50
/W
Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds
TL
260



Description

MMSF2P02E MiniMOSTM devices are an advanced series of power MOSFETs which utilize Motorola's TMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on)  and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the draintosource diode has a low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dcdc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. MMSF2P02E can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.




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