MJW21192G, US $ 1.13-2.26 , ON Semiconductor, MJW21192G DataSheet download, circuit diagram from SeekIC.com

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MJW21192G: Transistors Bipolar (BJT) 8A 150V 100W NPN

MJW21192G Data Sheet

US $ 1.13~2.26 / Piece | Get Latest Price

Part Number:: MJW21192G
Mfg:: ON Semiconductor
Supply Ability:: 5000

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US $1.49 - 2.25 / Piece

Transistors Bipolar (BJT) 16A 250V 200W NPN

Product Details

Quick Details

Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	150 V
Emitter- Base Voltage VEBO :	5 V	Maximum DC Collector Current :	8 A
DC Collector/Base Gain hfe Min :	15	Configuration :	Single
Maximum Operating Frequency :	4 MHz (Min)	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-247
Packaging :	Tube

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Packaging : Tube
Maximum DC Collector Current : 8 A
DC Collector/Base Gain hfe Min : 15
Package / Case : TO-247
Maximum Operating Frequency : 4 MHz (Min)
Collector- Emitter Voltage VCEO Max : 150 V

Parameters:

Technical/Catalog Information	MJW21192G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	150V
Current - Collector (Ic) (Max)	8A
Power - Max	125W
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 4A, 2V
Vce Saturation (Max) @ Ib, Ic	1V @ 400mA, 4A
Frequency - Transition	4MHz
Current - Collector Cutoff (Max)	10A
Mounting Type	Through Hole
Package / Case	TO-247-3 (TO-247AC, Straight Leads)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MJW21192G MJW21192G

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MJW21192G

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