Transistors Bipolar (BJT) 8A 150V 100W PNP
MJW21191G: Transistors Bipolar (BJT) 8A 150V 100W PNP
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Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 150 V |
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 8 A |
DC Collector/Base Gain hfe Min : | 15 | Configuration : | Single |
Maximum Operating Frequency : | 4 MHz (Min) | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | TO-247 |
Packaging : | Tube |
Technical/Catalog Information | MJW21191G |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | PNP |
Voltage - Collector Emitter Breakdown (Max) | 150V |
Current - Collector (Ic) (Max) | 8A |
Power - Max | 125W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 4A, 2V |
Vce Saturation (Max) @ Ib, Ic | 1V @ 400mA, 4A |
Frequency - Transition | 4MHz |
Current - Collector Cutoff (Max) | 10A |
Mounting Type | Through Hole |
Package / Case | TO-247-3 (TO-247AC, Straight Leads) |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | MJW21191G MJW21191G |