MJW21192

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Packaging : Tube
Maximum DC Collector Current : 8 A
DC Collector/Base Gain hfe Min : 15
Package / Case : TO-247
Maximum Operating Frequency : 4 MHz (Min)
Collector- Emitter Voltage VCEO Max : 150 V


Application

• DC Current Gain Specified up to 8.0 Amperes at Temperature
• All On Characteristics at Temperature
• High SOA: 20 A, 18 V, 100 ms
• TO247AE Package


Specifications

Rating	Symbol	MJW21191 MJW21192	Unit
CollectorEmitter Voltage	VCEO	150	Vdc
CollectorBase Voltage	VCE	150	Vdc
EmitterBase Voltage	VEB	5.0	Vdc
Collector Current - Continuous - Peak	IC	8.0 16	Adc
Base Current - Continuous	IB	2.0	Adc
Total Power Dissipation @ TC = 25 Derate Above 25	PD	100 0.65	Watts W/
Operating and Storage Junction Temperature Range	TJ, Tstg	65 to +150

Parameters:

Technical/Catalog Information	MJW21192
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	150V
Current - Collector (Ic) (Max)	8A
Power - Max	125W
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 4A, 2V
Vce Saturation (Max) @ Ib, Ic	1V @ 400mA, 4A
Frequency - Transition	4MHz
Current - Collector Cutoff (Max)	10A
Mounting Type	Through Hole
Package / Case	TO-247-3 (TO-247AC, Straight Leads)
Packaging	Tube
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MJW21192 MJW21192