MJD127-1

Features: `STMicroelectronics PREFERRED SALESTYPES`LOW BASE-DRIVE REQUIREMENTS`INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE`THROUGH HOLE TO-251 (IPAK) POWER PACKAGE IN TUBE (SUFFIX -1 )`SURFACE MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX T4 )`ELECTRICALLY SIMILAR TO TIP122...

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MJD127-1 Picture
SeekIC No. : 004421529 Detail

MJD127-1: Features: `STMicroelectronics PREFERRED SALESTYPES`LOW BASE-DRIVE REQUIREMENTS`INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE`THROUGH HOLE TO-251 (IPAK) POWER PACKAGE IN TUBE (SUFFIX -1 )`SURFACE ...

floor Price/Ceiling Price

Part Number:
MJD127-1
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/26

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Product Details

Description



Features:

`STMicroelectronics PREFERRED SALESTYPES
`LOW BASE-DRIVE REQUIREMENTS
`INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE
`THROUGH HOLE TO-251 (IPAK) POWER PACKAGE IN TUBE (SUFFIX "-1")
`SURFACE MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4")
`ELECTRICALLY SIMILAR TO TIP122 AND TIP127



Application

·GENERAL PURPOSE SWITCHING AND AMPLIFIER


Specifications

Symbol
Conditions
 
Value
Unit
PNP
MJD122
NPN
MJD127
VCBO
Collector-Base Voltage (IE = 0)
100
V
VCEO
Collector-Emitter Voltage (IB = 0)
100
V
VEBO
Emitter-Base Voltage (IC = 0)
5
V
IC
Collector Current
5
A
ICM
Collector Peak Current (tp < 5 ms)
8
A
IB
Base Current
0.1
A
Ptot
Total Dissipation at Tc = 25
20
W
Tstg
Storage Temperature
-65 to 200
TJ
Max. Operating Junction Temperature
150



Description

The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance.


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