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MJD122T4G

Transistors Darlington 8A 100V Bipolar Power NPN

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SeekIC No. : 00216850 Detail

MJD122T4G: Transistors Darlington 8A 100V Bipolar Power NPN

MJD122T4G Data Sheet

floor Price/Ceiling Price

US $ .18~.34 / Piece | Get Latest Price
Part Number:
MJD122T4G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.34
  • $.3
  • $.22
  • $.18
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Configuration : Single Transistor Polarity : NPN
Collector- Emitter Voltage VCEO Max : 100 V Emitter- Base Voltage VEBO : 5 V
Collector- Base Voltage VCBO : 100 V Maximum DC Collector Current : 8 A
Maximum Collector Cut-off Current : 10 uA Power Dissipation : 20 W
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : DPAK Packaging : Reel    

Description

Transistor Polarity : NPN
Mounting Style : SMD/SMT
Packaging : Reel
Configuration : Single
Collector- Emitter Voltage VCEO Max : 100 V
Emitter- Base Voltage VEBO : 5 V
Collector- Base Voltage VCBO : 100 V
Maximum Operating Temperature : + 150 C
Maximum DC Collector Current : 8 A
Maximum Collector Cut-off Current : 10 uA
Power Dissipation : 20 W
Package / Case : DPAK


Parameters:

Technical/Catalog InformationMJD122T4G
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Transistor TypeNPN - Darlington
Voltage - Collector Emitter Breakdown (Max)100V
Current - Collector (Ic) (Max)8A
Power - Max20W
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 4A, 4V
Vce Saturation (Max) @ Ib, Ic2V @ 15mA, 4A
Frequency - Transition4MHz
Current - Collector Cutoff (Max)10A
Mounting TypeSurface Mount
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
PackagingDigi-Reel?
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MJD122T4G
MJD122T4G
MJD122T4GOSDKR ND
MJD122T4GOSDKRND
MJD122T4GOSDKR



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