MJD122T4

Transistors Darlington NPN Power Darlington

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SeekIC No. : 00216660 Detail

MJD122T4: Transistors Darlington NPN Power Darlington

floor Price/Ceiling Price

US $ .21~.29 / Piece | Get Latest Price
Part Number:
MJD122T4
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~500
  • Unit Price
  • $.29
  • $.26
  • $.22
  • $.21
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Quick Details

Configuration : Single Transistor Polarity : NPN
Collector- Emitter Voltage VCEO Max : 100 V Emitter- Base Voltage VEBO : 5 V
Collector- Base Voltage VCBO : 100 V Maximum DC Collector Current : 5 A
Maximum Collector Cut-off Current : 10 uA Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : TO-252
Packaging : Reel    

Description

Power Dissipation :
Transistor Polarity : NPN
Mounting Style : SMD/SMT
Packaging : Reel
Configuration : Single
Collector- Emitter Voltage VCEO Max : 100 V
Emitter- Base Voltage VEBO : 5 V
Collector- Base Voltage VCBO : 100 V
Maximum Operating Temperature : + 150 C
Maximum DC Collector Current : 5 A
Maximum Collector Cut-off Current : 10 uA
Package / Case : TO-252


Features:

`STMicroelectronics PREFERRED SALESTYPES
`LOW BASE-DRIVE REQUIREMENTS
`INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE
`THROUGH HOLE TO-251 (IPAK) POWER PACKAGE IN TUBE (SUFFIX "-1")
`SURFACE MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4")
`ELECTRICALLY SIMILAR TO TIP122 AND TIP127



Application

·GENERAL PURPOSE SWITCHING AND AMPLIFIER


Specifications

Symbol
Conditions
 
Value
Unit
PNP
MJD122
NPN
MJD127
VCBO
Collector-Base Voltage (IE = 0)
100
V
VCEO
Collector-Emitter Voltage (IB = 0)
100
V
VEBO
Emitter-Base Voltage (IC = 0)
5
V
IC
Collector Current
5
A
ICM
Collector Peak Current (tp < 5 ms)
8
A
IB
Base Current
0.1
A
Ptot
Total Dissipation at Tc = 25
20
W
Tstg
Storage Temperature
-65 to 200
TJ
Max. Operating Junction Temperature
150



Description

The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance.


Parameters:

Technical/Catalog InformationMJD122T4
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Transistor TypeNPN - Darlington
Voltage - Collector Emitter Breakdown (Max)100V
Current - Collector (Ic) (Max)5A
Power - Max20W
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 4A, 4V
Vce Saturation (Max) @ Ib, Ic2V @ 16mA, 4A
Frequency - Transition-
Current - Collector Cutoff (Max)10A
Mounting TypeSurface Mount
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
PackagingTape & Reel (TR)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MJD122T4
MJD122T4
497 2469 2 ND
49724692ND
497-2469-2



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