MJD122

Transistors Darlington 8A 100V Bipolar

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SeekIC No. : 00218038 Detail

MJD122: Transistors Darlington 8A 100V Bipolar

floor Price/Ceiling Price

Part Number:
MJD122
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Quick Details

Configuration : Single Transistor Polarity : NPN
Collector- Emitter Voltage VCEO Max : 100 V Emitter- Base Voltage VEBO : 5 V
Collector- Base Voltage VCBO : 100 V Maximum DC Collector Current : 8 A
Maximum Collector Cut-off Current : 10 uA Power Dissipation : 20 W
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : DPAK Packaging : Tube    

Description

Transistor Polarity : NPN
Mounting Style : SMD/SMT
Packaging : Tube
Configuration : Single
Collector- Emitter Voltage VCEO Max : 100 V
Emitter- Base Voltage VEBO : 5 V
Collector- Base Voltage VCBO : 100 V
Maximum Operating Temperature : + 150 C
Maximum DC Collector Current : 8 A
Maximum Collector Cut-off Current : 10 uA
Power Dissipation : 20 W
Package / Case : DPAK


Application

• Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
• Straight Lead Version in Plastic Sleeves ("1" Suffix)
• Lead Formed Version Available in 16 mm Tape and Reel ("T4" Suffix)
• Surface Mount Replacements for 2N60402N6045 Series, TIP120TIP122 Series, and TIP125TIP127 Series
• Monolithic Construction With Builtin BaseEmitter Shunt Resistors
• High DC Current Gain - hFE = 2500 (Typ) @ IC = 4.0 Adc
• Complementary Pairs Simplifies Designs



Specifications

Rating
Symbol
MJD122
MJD127
Unit
CollectorEmitter Voltage
VCEO
100
Vdc
CollectorBase Voltage
VCBO
100
Vdc
EmitterBase Voltage
VEB
5
Vdc
Collector Cument - Continuous Peak
IC
8
16
Adc
Base Cument
IB
120
mAdc
Total Power Dissipation @ TC = 25
Derate Above 25
PD
20
0.16
Watts
W/
Total Power Dissipation @ TC = 25
Derate Above 25
PD
1.75
0.014
Watts
W/
Operating and Storage Junction Temperature Range
TJ, Tstg
65 to +200



Parameters:

Technical/Catalog InformationMJD122
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN - Darlington
Voltage - Collector Emitter Breakdown (Max)100V
Current - Collector (Ic) (Max)8A
Power - Max20W
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 4A, 4V
Vce Saturation (Max) @ Ib, Ic2V @ 15mA, 4A
Frequency - Transition4MHz
Current - Collector Cutoff (Max)10A
Mounting TypeSurface Mount
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
PackagingTube
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names MJD122
MJD122



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