MJD122-1

Power Dissipation :
Transistor Polarity : NPN
Mounting Style : Through Hole
Packaging : Tube
Configuration : Single
Collector- Emitter Voltage VCEO Max : 100 V
Emitter- Base Voltage VEBO : 5 V
Collector- Base Voltage VCBO : 100 V
Maximum Operating Temperature : + 150 C
Maximum DC Collector Current : 5 A
Maximum Collector Cut-off Current : 10 uA
Package / Case : TO-251


Features:

`STMicroelectronics PREFERRED SALESTYPES
`LOW BASE-DRIVE REQUIREMENTS
`INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE
`THROUGH HOLE TO-251 (IPAK) POWER PACKAGE IN TUBE (SUFFIX "-1")
`SURFACE MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4")
`ELECTRICALLY SIMILAR TO TIP122 AND TIP127


Application

·GENERAL PURPOSE SWITCHING AND AMPLIFIER


Specifications

Symbol	Conditions		Value	Unit
		PNP	MJD122
		NPN	MJD127
VCBO	Collector-Base Voltage (IE = 0)		100	V
VCEO	Collector-Emitter Voltage (IB = 0)		100	V
VEBO	Emitter-Base Voltage (IC = 0)		5	V
IC	Collector Current		5	A
ICM	Collector Peak Current (tp < 5 ms)		8	A
IB	Base Current		0.1	A
Ptot	Total Dissipation at Tc = 25		20	W
Tstg	Storage Temperature		-65 to 200
TJ	Max. Operating Junction Temperature		150

Description

The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance.