Features: ·High input impedance·Enhancement-mode·The electrodes are isolated from case.Specifications Characteristics Symbol Rating Unit Collector-emitter voltage VCES 1200 V Gate-emitter voltage VGES ±20 V Collector current DC IC 150 A 1ms ICP 300 Forward cu...
MG150Q2YS65H: Features: ·High input impedance·Enhancement-mode·The electrodes are isolated from case.Specifications Characteristics Symbol Rating Unit Collector-emitter voltage VCES 1200 V Gate...
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DescriptionThe MG150J1JS50 is a kind of GTR module. It is silicon N channel IGBT. The device is de...
DescriptionThe MG150J1ZS50 is a kind of GTR module. It is silicon N channel IGBT. The device is de...
Application·The electrodes are isolated from case. ·High input impedance ·7 IGBTs built into 1 pac...
Characteristics | Symbol | Rating | Unit | |
Collector-emitter voltage | VCES | 1200 | V | |
Gate-emitter voltage | VGES | ±20 | V | |
Collector current | DC | IC | 150 | A |
1ms | ICP | 300 | ||
Forward current | DC | IF | 150 | kA |
1ms | IFM | 300 | ||
Total power dissipation (Tc=25°C) | PC | 890 | W | |
Junction temperature | Tj | 150 | ||
Storage temperature range | Tstg | -40 ~ 125 | ||
Isolation voltage | VIsol | 2500 (AC 1 minute) |
V | |
Screw Torque | Terminal | 3 | N?m | |
Mounting | 3 |