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MG150J7KS50

Application·The electrodes are isolated from case. ·High input impedance ·7 IGBTs built into 1 package. ·Enhancement-mode ·High speed type IGBT : Inverter stage : VCE (sat) = 2.8V (max) (@IC = 150A) : tf = 0.5µs (max) (@IC = 150A) : trr = 0.3µs (max) (@IF = 150A) ·Outline : TOSHIBA ...

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MG150J7KS50: Application·The electrodes are isolated from case. ·High input impedance ·7 IGBTs built into 1 package. ·Enhancement-mode ·High speed type IGBT : Inverter stage : VCE (sat) = 2.8V (max) (@IC = 150A...

MG150J7KS50 Data Sheet

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Part Number:
MG150J7KS50
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Application

·The electrodes are isolated from case.
·High input impedance
·7 IGBTs built into 1 package.
·Enhancement-mode 
·High speed type IGBT :  Inverter stage
                                      : VCE (sat) = 2.8V (max) (@IC = 150A)
                                      : tf = 0.5µs (max) (@IC = 150A)
                                      : trr = 0.3µs (max) (@IF = 150A)
·Outline : TOSHIBA 2-110A1B
·Weight: 520g


Specifications

Characteristics Symbol Rating Unit
Collector-emitter voltage VCES 600 V
Gate-emitter voltage VGES ±20 V
Collector current DC IC 150 A
1ms ICP 300
Forward current DC IF 150 A
1ms IFM 300
Total power dissipation (Tc=25°C) PC 320 W
Junction temperature Tj 150
Storage temperature range Tstg −40 ~ 125
Isolation voltage VIsol 2500
(AC 1 min.) 		V
Screw torque (Terminal / mounting) 3 / 3 N`m



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