MG150J1ZS50

The MG150J1ZS50 is a kind of GTR module. It is silicon N channel IGBT. The device is designed for high power switching applications and motor control applications. There are some features of MG150J1ZS50 as follows: (1)the electrodes are isolated from case; (2)high input impedance; (3)includes a complete half bridge in one package; (4)enhancement-mode; (5)high speed: tf=0.30s (max) (IC=150 A); trr=0.15s (max) (IF=150 A); (6)low saturation voltage: VCE(sat)=2.70 V (max) (IC=150 A).

What comes next is about the maximum ratings of MG150J1ZS50 (Ta=25): (1)collector-emitter voltage, VCES: 600 V; (2)gate-emitter voltage, VGES: ±20 V; (3)collector current, DC, IC: 150 A; (4)collector current, 1 ms, ICP: 300 A; (5)forward current, DC, IF: 150 A; (6)forward current, 1ms, IFM: 300 A; (7)collector power dissipation (Tc=25), PC: 780 W; (8)junction temperature, Tj: 150; (9)storage temperature range, Tstg: -40 to 125; (10)isolation voltage, VIsol: 2500 V (AC, 1 min).

The following is about the electrical characteristics of MG150J1ZS50 (Ta=25): (1)gate leakage current, IGES: ±500 nA at VGE=±20 V, VCE=0; (2)collector cutoff current, ICES: 2.0 mA at VCE=600 V, VGE=0; (3)gate-emitter cutoff voltage, VGE(off): 5.0 V min, 7.0 V typ and 8.0 V max; (4)collector-emitter cutoff voltage, VCE(sat): 2.10 V typ and 2.70 V max at IC=150 A, VGE=15 V; (5)input capacitance, Cies: 14200 pF typ at VCE=10 V, VGE=0, f=1 MHz; (6)forward voltage, VF: 2.30 V typ and 3.00 V max at IF=150 A, VGE=0; (7)reverse recovery time, trr: 0.08s typ and 0.15s max at IF=150 A, VGE=-10 V, di/dt=200 A/s; (8)thermal resistance, Rth(j-c): 0.16/W for transistor stage and 0.35/W for diode stage.