Features: • Single Positive Supply• 57% Power Added Efficiency• Operation down to 1.2 V• 100% Duty Cycle• 1800 - 2000 MHz Operation• Self-Aligned MSAG ® - Lite MESFET Process• Lead-Free 8 Pin Full Downset MSOP Package• 100% Matte Tin Plating over...
MAAPSS0107: Features: • Single Positive Supply• 57% Power Added Efficiency• Operation down to 1.2 V• 100% Duty Cycle• 1800 - 2000 MHz Operation• Self-Aligned MSAG ® - Lit...
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Features: · 2 Watt Saturated Output Power Level· Variable Drain Voltage (6-10V) Operation· MSAG...
Features: · 1.0 Watt Saturated Output Power Level· Variable Drain Voltage (6-10V) Operation· MSAG&...
Features: · 8 Watt Saturated Output Power Level· Eutectically mounted to Heat Spreader· Next level...
Parameter |
Absolute Maximum |
DC Supply Voltage |
5.5 V |
RF Input Power |
10 mW |
Junction Temperature |
150 |
Storage Temperature Range |
-40 to +150 |
Operating Temperature Range |
-40 to +100 |
Moisture Sensitivity |
JEDEC Level 1 |
M/A-COM's MAAPSS0107 is a DECT power amplifier based on M/A-COM's Self Aligned MSAG MESFET Process. This product is designed for use in 3.6 V DECT handsets and base stations.