Features: · 8 Watt Saturated Output Power Level· Eutectically mounted to Heat Spreader· Next level integration is a Silver Epoxy-Based Process· Variable Drain Voltage (6-10V) Operation· MSAG™ ProcessApplication· SatCom· Radio Communications· Radar· Electronic WarfareSpecifications Cha...
MAAP-000074-PED000: Features: · 8 Watt Saturated Output Power Level· Eutectically mounted to Heat Spreader· Next level integration is a Silver Epoxy-Based Process· Variable Drain Voltage (6-10V) Operation· MSAG™ ...
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Features: · 2 Watt Saturated Output Power Level· Variable Drain Voltage (6-10V) Operation· MSAG...
Features: · 1.0 Watt Saturated Output Power Level· Variable Drain Voltage (6-10V) Operation· MSAG&...
Features: · 13 Watt Saturated Output Power Level· Eutectically Mounted to Heat Spreader· Next l...
Characteristic | Symbol | Absolute Maximum | Unit |
Input Power | PIN | 33 | dBm |
Drain Supply Voltage | VDD | +12.0 | V |
Gate Supply Voltage | VGG | -3.0 | V |
Quiescent Drain Current (No RF) | IDQ | 3.0 | A |
Quiescent DC Power Dissipated (No RF) | PDISS | 33 | W |
Junction Temperature | TJ | 170 | °C |
Storage Temperature | TSTG | -55 to +150 | °C |
The MAAP-000074-PED000 is a 2-stage 8W power amplifier with on-chip bias networks, eutettically mounted on a 10-mil thick Copper Molybdenum (CuMo) pedestal. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications.
MAAP-000074-PED000 Fabricated using M/A-COM's repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAG™)Process, each device is 100% RF tested at the die-on-pedestal assembly level to ensure performance compliance.
MAAP-000074-PED000 M/A-COM's MSAG™ process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging.