MAAPGM0066-DIE

Features: · 2.5 Watt Saturated Output Power Level· Variable Drain Voltage (4-10V) Operation· MSAG® ProcessApplication· Point-to-Point Radios· Point-to-Multipoint Radios· SatCom· Broadband Wireless AccessSpecifications Characteristic Symbol Absolute Maximum Unit Input Power PIN 1...

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SeekIC No. : 004408056 Detail

MAAPGM0066-DIE: Features: · 2.5 Watt Saturated Output Power Level· Variable Drain Voltage (4-10V) Operation· MSAG® ProcessApplication· Point-to-Point Radios· Point-to-Multipoint Radios· SatCom· Broadband Wirele...

floor Price/Ceiling Price

Part Number:
MAAPGM0066-DIE
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

· 2.5 Watt Saturated Output Power Level
· Variable Drain Voltage (4-10V) Operation
· MSAG® Process



Application

· Point-to-Point Radios
· Point-to-Multipoint Radios
· SatCom
· Broadband Wireless Access



Specifications

Characteristic Symbol Absolute Maximum Unit
Input Power PIN 16.0 dBm
Drain Supply Voltage VDD 12.0 V
Gate Supply Voltage VGG -3.0 V
Quiescent Drain Current (No RF) IDQ 1.04 A
Quiescent DC Power Dissipated (No RF) PDISS 10.4 W
Junction Temperature TJ 170 °C
Storage Temperature TSTG -55 to +150 °C

 




Description

The MAAPGM0066-DIE is a 3-stage 2 W power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications.

MAAPGM0066-DIE Fabricated using M/A-COM's repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAG™)Process, each device is 100% RF tested on wafer to ensure performance compliance.

MAAPGM0066-DIE M/A-COM's MSAG™ process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging.




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