MAAPGM0062 DIE

Features: · 4 Watt Saturated Output Power Level· MSAG™ Process· Proven Manufacturability and Reliability· No Airbridges· Polyimide Scratch Protection· No Hydrogen Poisoning SusceptibilityDescriptionThe MAAPGM0062-Die is a 3-stage power amplifier with onchip bias networks. This product is ful...

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SeekIC No. : 004408055 Detail

MAAPGM0062 DIE: Features: · 4 Watt Saturated Output Power Level· MSAG™ Process· Proven Manufacturability and Reliability· No Airbridges· Polyimide Scratch Protection· No Hydrogen Poisoning SusceptibilityDescr...

floor Price/Ceiling Price

Part Number:
MAAPGM0062 DIE
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

· 4 Watt Saturated Output Power Level
· MSAG™ Process
· Proven Manufacturability and Reliability
· No Airbridges
· Polyimide Scratch Protection
· No Hydrogen Poisoning Susceptibility



Description

The MAAPGM0062-Die is a 3-stage power amplifier with onchip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications.

MAAPGM0062-Die  Fabricated using M/A-COM's repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate MESFET Process, each device is 100% RF tested on wafer to ensure performance compliance.

MAAPGM0062-Die  M/A-COM's MSAG™ process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging.




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