MAAPGM0037-DIE

Features: · 1.0 Watt Saturated Output Power Level· Variable Drain Voltage (4-10V) Operation· MSAG™ ProcessApplication· Instrumentation· Test Equipment· Electronic WarfareSpecifications Parameter Symbol Absolute Maximum Units Input Power PIN 25.0 dBm Drain Supply Voltage V...

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SeekIC No. : 004408054 Detail

MAAPGM0037-DIE: Features: · 1.0 Watt Saturated Output Power Level· Variable Drain Voltage (4-10V) Operation· MSAG™ ProcessApplication· Instrumentation· Test Equipment· Electronic WarfareSpecifications ...

floor Price/Ceiling Price

Part Number:
MAAPGM0037-DIE
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

· 1.0 Watt Saturated Output Power Level
· Variable Drain Voltage (4-10V) Operation
· MSAG™ Process



Application

· Instrumentation
· Test Equipment
· Electronic Warfare



Specifications

Parameter

Symbol Absolute Maximum Units
Input Power PIN 25.0 dBm
Drain Supply Voltage VDD +12.0 V
Gate Supply Voltage VGG -3.0 V
Quiescent Drain Current (No RF) IDQ 470 mA
Quiescent DC Power Dissipated (No RF) PDISS 3.2 W
Junction Temperature TJ 180 °C
Storage Temperature TSTG -55 to +150 °C
2. Operation outside of these ranges may reduce product reliability. Operation at other than the typical values may
    result in performance outside the guaranteed limits.



Description

The MAAPGM0037-Die is a 2-stage 1.0 W power amplifier with onchip bias networks. This product is fully matched to 50 ohms on both the input and output. MAAPGM0037 can be used as a power amplifier stage or as a driver stage in high power applications.

MAAPGM0037 Fabricated using M/A-COM's repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAG™) Process, each device is 100% RF tested on wafer to ensure performance compliance.

MAAPGM0037 M/A-COM's MSAG™ process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging.




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