Features: · 1.2 Watt Saturated Output Power Level· Variable Drain Voltage (4-10V) Operation· Self-Aligned MSAG® ProcessApplication·2.5-2.7 GHz MMDS·GPS·Radar·TelemetryDescriptionThe MAAPGM0036 is a packaged, 2-stage, 1.2 W power amplifier with on-chip bias networks in a bolt down ceramic packa...
MAAPGM0036: Features: · 1.2 Watt Saturated Output Power Level· Variable Drain Voltage (4-10V) Operation· Self-Aligned MSAG® ProcessApplication·2.5-2.7 GHz MMDS·GPS·Radar·TelemetryDescriptionThe MAAPGM0036 i...
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Features: · 2 Watt Saturated Output Power Level· Variable Drain Voltage (6-10V) Operation· MSAG...
Features: · 1.0 Watt Saturated Output Power Level· Variable Drain Voltage (6-10V) Operation· MSAG&...
Features: · 8 Watt Saturated Output Power Level· Eutectically mounted to Heat Spreader· Next level...
The MAAPGM0036 is a packaged, 2-stage, 1.2 W power amplifier with on-chip bias networks in a bolt down ceramic package, allowing easy assembly. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications.
Each device MAAPGM0036 is 100% RF tested to ensure performance compliance. The part is fabricated using M/A-COM's GaAs Multifunction Self-Aligned Gate (MSAG®) MESFET Process. M/A-COM's MSAG process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors and multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging.