Features: • Ideal for WiMax, MESH Network, and LinearApplications• Small Signal Gain: 11 dB Typical• EVM: 2.5% at 30 dBm Linear (OFDM) POUT• Includes thermally-coupled reference FET for usein external biasing circuit• Lead-Free 4 mm 16 lead PQFN Package• 100% Ma...
MAAP-008171: Features: • Ideal for WiMax, MESH Network, and LinearApplications• Small Signal Gain: 11 dB Typical• EVM: 2.5% at 30 dBm Linear (OFDM) POUT• Includes thermally-coupled refere...
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Features: · 2 Watt Saturated Output Power Level· Variable Drain Voltage (6-10V) Operation· MSAG...
Features: · 1.0 Watt Saturated Output Power Level· Variable Drain Voltage (6-10V) Operation· MSAG&...
Features: · 8 Watt Saturated Output Power Level· Eutectically mounted to Heat Spreader· Next level...
Parameter | Absolute Maximum |
Input Power | +32 dbm |
Operating Supply Voltage |
+120 volts |
Gate Voltage | +1 volts |
Gate Voltage | -30°C to +85°C |
Channel Temperature | +150°C |
Storage Temperature | -40°C to +150°C |
M/A-Com's MAAP-008171 is an unmatched high power GaAs pHEMT which exhibits high gain and linearity performance in a lead-free 4mm PQFN 16-Lead surface mount plastic package. This part is tunable over a frequency range from 600 MHz to 4000 MHz making it ideal many linear applications such as CDMA, WCDMA, and WiMax.
This part can achieve 27 dBm /30 dBm Linear Pout when measured for 802.16d (EVM < 2.5%) when operated @ 12V. It also contains a thermallycoupled reference transistor to allow simple current mirror biasing.
The MAAP-008171 is fabricated using a high reliability GaAs PHEMT process to realize low current and high power functionality. The process features full passivation for increased performance and reliability.