MA4P7470F-1072T

The diodes are well suited for use in low loss, low distortion, and high power switching circuits applicable for high magnetic field environments from HF through UHF frequencies. The lower thermal resistance of this device provides excellent higher average performance at RF power incident levels up to 200 watts CW. This device is designed to meet the most rigorous electrical and mechanical requirements of MRI testing environments.

The MA4P7470F-1072T is a surface mountable PIN diode in a Non-Magnetic ( patent pending ) Metal Electrode Leadless Faced (MELF) package. The device incorporates M/A-COM's proven HIPAX technology to produce a low inductance ceramic package with no ribbons or whisker wires. The package utilizes M/A-COM's new nonmagnetic plating process to provide an extremely low permeability, hermetically sealed package. Incorporated in the package is a passivated PIN diode that is full face bonded on both the cathode and anode of the chip to maximize surface area for lower electrical and thermal resistance. The MA4P7470F-1072T has been comprehensively characterized both electrically and mechanically to ensure repeatable and predictable performance.