Features: High Power HandlingLow Loss, Low DistortionVoltage Ratings to 1000 VoltsPassivated PIN Chip Full Face BondedHermetically SealedLow Inductance Axial Lead, and SMQSurface Mount Package OptionsAvailable as ChipsApplication The semiconductor technology utilized in the HIPAX family draws on ...
MA4P: Features: High Power HandlingLow Loss, Low DistortionVoltage Ratings to 1000 VoltsPassivated PIN Chip Full Face BondedHermetically SealedLow Inductance Axial Lead, and SMQSurface Mount Package Opti...
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The semiconductor technology utilized in the HIPAX family draws on M/A-COM's substantial experience in PIN diode design. This results in thick intrinsic region PIN diodes specified with low resistance, low capacitance and long carrier lifetime parameters.
Parameter | Absolute Maximum |
DC Reverse Voltage | Voltage Rating |
Operating and Storage Temperature | -65 to +175 |
Installation Temperature | +250, 30 Seconds |
M/A-COM's HIPAX PIN diodes MA4P are designed for service in switch and attenuator applications requiring high power handling and low distortion. HIPAX PIN diodes incorpo-rate a fully passivated PIN diode chip resulting in extremely low reverse leakage current. all high voltage HIPAX PIN diodes are specified at 1 A reverse current at the voltage rating. The chip is full face bonded to refrac-tory metal pins on both anode and cathode. The result is a low loss PIN diode with low thermal resistance due to symmetrical thermal paths.
HIPAX PIN diodes MA4P are packaged in hermetically sealed ceramic enclosures at temperatures exceeding 300°C. Package options include: axial leaded and surface mount packages that have a square, nonrollable outline.
The semiconductor technology utilized in the HIPAX family draws on M/A-COM's substantial experience in PIN diode design. This results in thick intrinsic region PIN diodes specified with low resistance, low capacitance and long carrier lifetime parameters.