Features: ·Non-Rollable MELF Design·Hermetically Sealed·Low Loss, Low Distortion·Passivated PIN Diode Chips·Ful·Face Chip Bonds·Non-Magnetic Package·Pick and Place CompatibilityApplicationThe MA4P1250 is designed for use as a low loss switching element from HF through UHF. Its high power rating al...
MA4P1250: Features: ·Non-Rollable MELF Design·Hermetically Sealed·Low Loss, Low Distortion·Passivated PIN Diode Chips·Ful·Face Chip Bonds·Non-Magnetic Package·Pick and Place CompatibilityApplicationThe MA4P12...
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The MA4P1250 is designed for use as a low loss switching element from HF through UHF. Its high power rating allows performance in antenna switch elements at RF power levels greater than 100 watts CW.
It is designed to meet the low distortion requirements of mobile radios. The MA4P1450 is a higher power diode. It has lower distortion at RF CW power greater than 10 watts and can dissipate 7.5 watts.
Parameter | Absolute Maximum |
Voltage Operating Temperature Storage Temperature |
50 Volts -65°C to + 175°C -65°C to +175°C |
Power Dissipation Free Air Contact Surfaces @ +25°C |
1.5 Watts 4.0 Watts |
The MA4P1250 and MA4P1450 are square surface mountable PIN diodes in a non-rollable, metal electrode leadless faced (MELF) package. They incorporate passivated PIN diode chips that are full face bonded to refractory metal pins. These parts utilize M/A-COM's HIPAX technology in a low inductance ceramic package with no ribbons or whisker wires. The package is hermetically sealed at temperatures exceeding 300°C.