MA4BPS301

These diodes are designed for use as general PIN elements in switches and switched pad attenuators. The chips can handle up to 10 watts of RF power, and are well suited for use in T/R switches for subscriber phones, particularly the higher power and higher frequency systems for satellite based systems. They are also useful for the switching element in phased array radar applications. The larger bond pad allows for two (2) 1 mil dia contact wires which reduces the bond wire inductance almost in half.

These silicon - glass PIN diode chips MA4BPS301 are fabricated with M/A-COM's patented HMIC™ process. They contain a single shunt silicon PIN diode embedded in a glass substrate with dual 75 x 150 micron bond pads located near the chip edges. The large pads MA4BPS301 allow use of multiple bond wires. The location of these pads on a glass substrate results in low parasitic capacitance. The diode junction is passivated with silicon nitride and a layer of polyimide has been added for scratch protection during assembly. The devices MA4BPS301 are available on industry standard tape frame for automatic insertion and assembly in high volume applications.