MA4BN1840-1

The MA4BN1840-1 millimeter frequency bias network is suitable for D.C. biasing PIN Diode control circuits as a RF-DC de-coupling network and as a D.C. Return network. The device can also be used as a bi-directional re-active coupler for schottky detector circuits. D.C. currents up to 150 mA and D.C. voltages up to 50 V may be used.

The MA4BN1840-1 device is a fully monolithic broadband bias network utilizing M/A-COM's HMIC ^TM (Heterolithic Microwave Integrated Circuit) Process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form vias by imbedding them in low loss, low dispersion glass in addition to High Q spiral Inductors and MIM capacitors. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high performance with exceptional repeatability through millimeter frequencies.

MA4BN1840-1 Large bond pads facilitate the use of low inductance ribbon bonds,while gold backside metalization allows for manual or automatic die attach via 80Au/20Sn or Sn62/Pb36/Ag2 solders or electrically conductive silver epoxy.