M69KB128AA

Stressing the device above the rating listed in the Absolute Maximum Ratings table may cause permanent damage to the device. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Refer also to the STMicroelectronics SURE Program and other relevant quality documents.

The M69KB128AA is a 128 Mbit (134,217,728 bit) PSRAM, organized as 8,388,608 Words by 16 bits. It uses a high-speed CMOS DRAM technology implemented using a one transistor-percell topology that achieves bigger array sizes. It provides a high-density solution for low-power handheld applications.

The M69KB128AA is supplied by a 1.7 to 1.95V supply voltage range.

The PSRAM interface supports various operating modes: Asynchronous Random Read and Write, Asynchronous Page Read and Synchronous mode that increases read/write speed.

In Asynchronous Random Read mode, the M69KB128AA is compatible with low power SRAMs. In Asynchronous Page mode the device has much shorter access times within the page that make it is compatible with the industry standard PSRAMs.

Two types of Synchronous modes are available:
·Flash-NOR: the device operates in Synchronous mode for read operations and Asynchronous mode for write operations.
·Full Synchronous: the device supports Synchronous transfers for both read and write operations.
The M69KB128AA features three configuration registers:
·Two user-programmable registers used to define the device operation: the Bus Configuration Register (BCR) and the Refresh Configuration Register (RCR).
·A read-only Device ID Register (DIDR) containing device identification.
The Bus Configuration Register (BCR) indicates how the device interacts with the system memory bus. The Refresh Configuration Register (RCR) is used to control how the memory array refresh is performed. At Power-Up, these registers are automatically loaded with default settings and can be updated any time during normal operation. PSRAMs are based on the DRAM technology, but have a transparent internal self-refresh mechanism that requires no additional support from the system memory microcontroller. To minimize the value of the Standby current during self-refresh operations, the M69KB128AA includes two system-accessible mechanisms configured via the Refresh Configuration Register (RCR):
·The Partial Array Self Refresh (PASR) performs a limited refresh of the part of the PSRAM array that contains essential data.
·The Deep Power-Down (DPD) mode completely halts the refresh operation. It is used when no essential data is being held in the device.