M65656G

Features:

Access time 40, 55 ns
Very low power consumption
    active : 50 mW (typ)
    standby : 0.5 W (typ)
    data retention : 0.4 W (typ)
Wide temperature range : 55 to + 125°C
300 and 600 mils width package
TTL compatible inputs and outputs
Asynchronous
Single 5 volt supply
Equal cycle and access time
Gated inputs : no pull-up/down resistors are required


Pinout




Specifications

Supply voltage to GND potential : . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 V to + 7.0 V
Input or Output voltage applied : . . . . . . . . . . . . . . . . . . . . . . . . . . (Gnd 0.3 V) to (Vcc + 0.3 V)
Storage temperature : . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to + 150
Electro static discharge voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . > 2000 V (MIL STD 883, METHOD 3015)

OPERATING RANGE	OPERATING SUPPLY VOLTAGE	OPERATING TEMPERATURE
Military	Vcc = 5 V ± 10 %	55 to + 125

Description

The M65656G is a very low power CMOS static RAM organized as 32768 × 8 bits.

TEMIC brings the solution for applications where fast computing is as mandatory as low consumption, such as aerospace electronics, portable instruments or embarked
systems.

Using an array of six transistors (6T) memory cells, the M65656G combines an extremely low standby supply current (Typical value = 0.1 mA) with a fast access time at 40 ns. The high stability of the 6T cell provides excellent protection against soft errors due to noise.

Extra protection against heavy ions is given by the use of an epitaxial layer of a P substrate.

The M65656G is processed according to the methods of the latest revision of the MIL STD 883 (class B or S), ESA SCC 9000 and QML.