M65601

Features:

Access time : commercial : 25/35/45/55 ns
    Industrial and military : 25/30/35/45 ns
Very low power consumption
    Active : 250 mW (typ)
    Standby : 1 W (typ)
    Data retention : 0.5 W (typ)
Wide temperature range :
    55 TO + 125
400 mils width package
TTL compatible inputs and outputs
Asynchronous
Single 5 volt supply
Equal cycle and access time
Gated inputs :
    No pullup/down
    Resistors are required


Description

The M65601 is a very low power CMOS static RAM organized as 1048576x1 bits. It is manufactured using the MHS high performance 0.5 m CMOS technology named SCMOS.

With this process, MHS brings the optimal solution to applications where fast computing is as mandatory as low consumption, such as aerospace electronics, portable instruments, or embarked systems.

Utilizing an array of six transistors (6T) memory cells, the M65601 combines an extremely low standby supply current (Typical value = 0.2 A) with a fast access time at 25 ns over the full commercial temperature range. The high stability of the 6T cell provides excellent protection against soft errors due to noise.

Extra protection against heavy ions is given by the use of an epitaxial layer of a P substrate.

For military/space applications that demand superior levels of performance and reliability the M65601 is processed according to the methods of the latest revision of the MIL STD 883 (class B or S) and/or ESA SCC 9000.