M65608E

Features: Access time: 30, 45 nsVery low power consumption active : 250 mW (Typ) standby : 1 W (Typ) data retention : 0.5 W (Typ)Wide temperature Range : 55 To +125°C400 Mils width packageTTL compatible inputs and outputsAsynchronousSingle 5 volt supplyEqual cycle and access timeGated inputs : no ...

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SeekIC No. : 004406803 Detail

M65608E: Features: Access time: 30, 45 nsVery low power consumption active : 250 mW (Typ) standby : 1 W (Typ) data retention : 0.5 W (Typ)Wide temperature Range : 55 To +125°C400 Mils width packageTTL compat...

floor Price/Ceiling Price

Part Number:
M65608E
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/18

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Product Details

Description



Features:

Access time: 30, 45 ns
Very low power consumption
    active : 250 mW (Typ)
    standby : 1 W (Typ)
    data retention : 0.5 W (Typ)
Wide temperature Range : 55 To +125°C
400 Mils width package
TTL compatible inputs and outputs
Asynchronous
Single 5 volt supply
Equal cycle and access time
Gated inputs :
    no pull-up/down
    resistors are required



Pinout

  Connection Diagram


Specifications

Supply voltage to GND potential : . . . . . . . . . . . . . . . . . . . . . . . - 0.5 V + 7.0 V
DC input voltage : . . . . . . . . . . . . . . . . .  . . . . . . . . . . . . . . . . . GND 0,3 V to Vcc + 0,3
DC output voltage high Z state : . . . . . . . . . . . . . . . . .  . . . . . . GND 0,3 V to Vcc + 0,3
Storage temperature : . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to + 150
Output current into outputs (low) :. . . . . . . . . . . . . . . . . . . . . . 20 mA
Electro statics discharge voltage : . . . .  . . . . . . . . . . . . . . . . . . > 2 001 V (MIL STD 883D method 3015.3)
OPERATING RANGE OPERATING SUPPLY VOLTAGE OPERATING TEMPERATURE
Military Vcc = 5 V ± 10 % 55 to + 125



Description

The M65608E is a very low power CMOS static RAM organized as 131072 * 8 bits.

TEMIC brings the solution to applications where fast computing is as mandatory as low consumption, such as aerospace electronics, portable instruments, or embarked systems.

Utilizing an array of six transistors (6T) memory cells, the M65608E combines an extremely low standby supply current (Typical value = 0.2 A) with a fast access time at 30 ns over the full military temperature range. The high stability of the 6T cell provides excellent protection against soft errors due to noise.

The M65608E is processed according to the methods of the latest revision of the MIL STD 883 (class B or S), ESA SCC 9000 or QML.


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