Features: Standard 26 pin SOJ, 26 pin TSOP(II)
Single 3.3V±0.3V supply
Low stand-by power dissipation
CMOS lnput level .................................................1.8mW(Max)*
CMOS lnput level ................................................180µW(Max)
Low operating power dissipation
M5M4V4405Cxx-6, -6S .....................................288.0mW (Max)
M5M4V4405Cxx-7, -7S ....................................252.0mW (Max)
Self refresh capabiility*
Self refresh current ..............................................100µA(max)
Extended refresh capability*
Extended refresh current ....................................100µA(max)
Hyper-page mode (1024-bit random access), Read-modify- write, RAS-only refresh CAS before RAS refresh, Hidden refresh, CBR self refresh(-6S,-7S) capabilities.
Early-write mode and OE and W to control output buffer impedance
1024 refresh cycles every 16.4ms (A0~A9)
1024refresh cycle every128ms (A0~A9)*
*: Applicable to self refresh version (M5M4V4405Cxx-6S,-7S: option) only
ApplicationLap top personal computer,Solid state disc, Microcomputer memory, Refresh memory for CRT
Pinout
Specifications
| Symbol |
Parameter |
Conditions |
Ratings |
Unit |
| Vdd |
Supply Voltage |
With respect to VSS |
-0.5 ~ 4.6 |
V |
| VI |
Input Voltage |
-0.5 ~ 4.6 |
V |
| VO |
Output Voltage |
-0.5 ~ 4.6 |
V |
| IO |
Output Current |
|
50 |
mA |
| Pd |
Power Dissipation |
Ta = 25 °C |
1000 |
mW |
| Topr |
Operating Temperature |
|
0 ~ 70 |
°C |
| Tstg |
Storage Temperature |
|
-65 ~ 150 |
°C |
DescriptionM5M4V4405C-7,-7S are the family of 1048576-word by 4-bit dynamic RAMS, fabricated with the high performance CMOS process,and is ideal for large-capacity memory systems where high speed, low power dissipation , and low costs are essential.
The use of quadruple-layer polysilicon process combined with silicide technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs. Multiplexed address inputs permit both a reduction in pins and an increase in system densities.
Self or extended refresh current is low enough for battery back-up application.
M5M4V4405C-7,-7S Data Sheet
